Course Description
- Crysal fabrication: MBE, MOCVD, LEC, Bridgemann.
- Study material and electronic properties of single crystal Si, poly, a-Si, GaAs, GaN, SiC, Ge, and II-VI compounds.
- Transport properties: Hall, Peltier, resistivity, mobility.
- Analysis
of capacitance and I/V data for pn, pin, schottky, and heterojunction
devices.
Prerequisites
- Mathematics 110
Classes
3
lecture hours
3 semester hours